Vishay TrenchFET N channel-Channel Power MOSFET, 20 A, 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3
- RS Stock No.:
- 851-504
- Mfr. Part No.:
- SIR692DP-T1-BE3
- Manufacturer:
- Vishay
N
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TWD77.00
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD77.00 |
| 10 - 24 | TWD50.00 |
| 25 - 99 | TWD30.00 |
| 100 + | TWD29.00 |
*price indicative
- RS Stock No.:
- 851-504
- Mfr. Part No.:
- SIR692DP-T1-BE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.067Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25.3nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.067Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25.3nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay high-performance MOSFET designed for efficient power management in various electronic systems, ensuring reliability and precision in switching applications.
Utilises ThunderFET technology for optimal RDS(on), Qg, Qsw, and Qoss balancing
Guaranteed 100% Rg and UIS tested for enhanced reliability
Supports a maximum drain-source voltage of 250V
Minimal on-resistance of 0.063Ω at VGS of 10V ensures low power loss
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