Vishay TrenchFET N channel-Channel Power MOSFET, 40 A, 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- RS Stock No.:
- 851-502
- Mfr. Part No.:
- SIR178DP-T1-BE3
- Manufacturer:
- Vishay
N
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TWD74.00
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TWD77.70
(inc. GST)
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD74.00 |
| 10 - 24 | TWD48.00 |
| 25 - 99 | TWD29.00 |
| 100 - 499 | TWD28.00 |
| 500 + | TWD27.00 |
*price indicative
- RS Stock No.:
- 851-502
- Mfr. Part No.:
- SIR178DP-T1-BE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 69.5nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 69.5nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
The Vishay high-performance N-Channel power MOSFET designed for efficient energy management. Its primary function is to optimise conduction with low power loss, making it suitable for various power applications.
TrenchFET Gen IV technology ensures superior performance
Extremely low on-state resistance minimises conduction losses
Supports low voltage gate drive for enhanced efficiency
Completely tested for reliability under R and UIS conditions
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