Vishay TrenchFET N channel-Channel MOSFET, 101 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3
- RS Stock No.:
- 735-218
- Mfr. Part No.:
- SIR5408DP-T1-UE3
- Manufacturer:
- Vishay
N
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TWD39.00
(exc. GST)
TWD40.95
(inc. GST)
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- Shipping from February 08, 2027
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Units | Per unit |
|---|---|
| 1 - 24 | TWD39.00 |
| 25 - 99 | TWD26.00 |
| 100 + | TWD13.00 |
*price indicative
- RS Stock No.:
- 735-218
- Mfr. Part No.:
- SIR5408DP-T1-UE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.004Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32.6nC | |
| Maximum Power Dissipation Pd | 59.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 5.26mm | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.004Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32.6nC | ||
Maximum Power Dissipation Pd 59.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 5.26mm | ||
Length 6.25mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N channel MOSFET is built for high-efficiency power conversion and control in demanding electronic systems. it ensures robust performance with comprehensive testing, while maintaining compliance with environmental standards. its versatility makes it Ideal for applications requiring reliable rectification, Compact dc/dc solutions, and precise motor drive control.
Provides 100% Rg and UIS testing for proven reliability
Ensures RoHS compliance for environmental safety
Delivers halogen-free construction for eco-friendly design
Supports synchronous rectification for efficient power conversion
Enables motor drive control with dependable switching performance
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