Vishay TrenchFET N channel-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- RS Stock No.:
- 735-242
- Mfr. Part No.:
- SISS586DN-T1-UE3
- Manufacturer:
- Vishay
N
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD43.00
(exc. GST)
TWD45.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 12, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD43.00 |
| 10 - 24 | TWD28.00 |
| 25 - 99 | TWD15.00 |
| 100 + | TWD14.00 |
*price indicative
- RS Stock No.:
- 735-242
- Mfr. Part No.:
- SISS586DN-T1-UE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 1212-8S | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0085Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 1212-8S | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0085Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N channel MOSFET is designed for efficient power switching in a wide range of electronic applications. it delivers reliable performance with thorough gate resistance and unclamped inductive switching testing, ensuring robust operation under demanding conditions. the device supports environmentally responsible designs with RoHS compliant and halogen free construction, making it suitable for modern power management systems.
Supports high reliability operation in demanding environments
Suitable for synchronous rectification applications
Ideal for use as a primary side switch in power converters
Meets RoHS compliant and halogen free requirements
Related links
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5207DN-T1-UE3
- Vishay SISS64DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-UE3
- Vishay SISS26DN N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5406DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5404DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SIR532DP-T1-UE3