ROHM R4P Type N-Channel Single MOSFETs, 30 V Enhancement, 3-Pin MPT3 R4P030N03HZGT100
- RS Stock No.:
- 646-552
- Mfr. Part No.:
- R4P030N03HZGT100
- Manufacturer:
- ROHM
N
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 10 units)*
TWD122.00
(exc. GST)
TWD128.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | TWD12.20 | TWD122.00 |
| 100 - 240 | TWD10.80 | TWD108.00 |
| 250 - 990 | TWD9.70 | TWD97.00 |
| 1000 - 4990 | TWD7.90 | TWD79.00 |
| 5000 + | TWD7.60 | TWD76.00 |
*price indicative
- RS Stock No.:
- 646-552
- Mfr. Part No.:
- R4P030N03HZGT100
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | R4P | |
| Package Type | MPT3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.70 mm | |
| Length | 4.30mm | |
| Standards/Approvals | RoHS | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 30V | ||
Series R4P | ||
Package Type MPT3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.70 mm | ||
Length 4.30mm | ||
Standards/Approvals RoHS | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM 4 volt drive N channel metal oxide semiconductor field effect transistor features low on resistance and supports 4 volt drive operation.
AEC-Q101 Qualified
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