ROHM RD3 N-Channel Single MOSFETs, 36 A, 100 V Enhancement, 3-Pin TO-252 RD3P04BBKHRBTL
- RS Stock No.:
- 646-544
- Mfr. Part No.:
- RD3P04BBKHRBTL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
TWD268.00
(exc. GST)
TWD281.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 90 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | TWD26.80 | TWD268.00 |
| 100 - 490 | TWD23.60 | TWD236.00 |
| 500 - 990 | TWD21.20 | TWD212.00 |
| 1000 + | TWD16.80 | TWD168.00 |
*price indicative
- RS Stock No.:
- 646-544
- Mfr. Part No.:
- RD3P04BBKHRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 53W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 53W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.8mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.5mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 100 volt 36 ampere power metal oxide semiconductor field effect transistor features lead free plating and is restriction of hazardous substances compliant. It is one hundred percent avalanche tested.
Low on-resistance
AEC-Q101 qualified
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