STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK
- RS Stock No.:
- 215-242
- Mfr. Part No.:
- SCT070HU120G3AG
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
TWD438.00
(exc. GST)
TWD459.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD438.00 |
| 10 - 99 | TWD425.00 |
| 100 + | TWD412.00 |
*price indicative
- RS Stock No.:
- 215-242
- Mfr. Part No.:
- SCT070HU120G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | HU3PAK | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 23W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 14 mm | |
| Height | 3.5mm | |
| Length | 18.58mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type HU3PAK | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 23W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 14 mm | ||
Height 3.5mm | ||
Length 18.58mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Related links
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK SCT070HU120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG