STMicroelectronics SCT N-Channel MOSFET, 30 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCT070H120G3AG
- RS Stock No.:
- 482-977
- Mfr. Part No.:
- SCT070H120G3AG
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD573.00
(exc. GST)
TWD601.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 998 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | TWD573.00 |
| 5 + | TWD556.00 |
*price indicative
- RS Stock No.:
- 482-977
- Mfr. Part No.:
- SCT070H120G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Height | 10.4mm | |
| Length | 15.25mm | |
| Width | 24.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Height 10.4mm | ||
Length 15.25mm | ||
Width 24.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- IT
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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