STMicroelectronics SCT N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT027H65G3AG

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TWD531.00

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TWD557.55

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1 - 9TWD531.00
10 - 99TWD504.00
100 +TWD489.00

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Packaging Options:
RS Stock No.:
214-955
Mfr. Part No.:
SCT027H65G3AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

2.9V

Maximum Gate Source Voltage Vgs

22V

Typical Gate Charge Qg @ Vgs

48.6nC

Maximum Operating Temperature

175°C

Width

10.4mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Height

4.8mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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