STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin
- RS Stock No.:
- 215-245
- Mfr. Part No.:
- SCT070W120G3-4AG
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
TWD468.00
(exc. GST)
TWD491.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 30 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 + | TWD468.00 |
*price indicative
- RS Stock No.:
- 215-245
- Mfr. Part No.:
- SCT070W120G3-4AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -10, 22V | |
| Maximum Power Dissipation Pd | 236W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -10, 22V | ||
Maximum Power Dissipation Pd 236W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
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