STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7
- RS Stock No.:
- 215-226
- Mfr. Part No.:
- SCT018H65G3AG
- Manufacturer:
- STMicroelectronics
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TWD755.00
(exc. GST)
TWD792.75
(inc. GST)
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In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | TWD755.00 |
| 10 - 99 | TWD732.00 |
| 100 + | TWD710.00 |
*price indicative
- RS Stock No.:
- 215-226
- Mfr. Part No.:
- SCT018H65G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 385W | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Maximum Operating Temperature | 75°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 385W | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Maximum Operating Temperature 75°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Related links
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