IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1.2 kV Enhancement, 3-Pin TO-264

The image is for reference only, please refer to product details and specifications

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal (1 tube of 25 units)*

TWD26,685.00

(exc. GST)

TWD28,019.25

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Tube*
25 - 100TWD1,067.40TWD26,685.00
125 +TWD1,046.00TWD26,150.00

*price indicative

RS Stock No.:
920-0877
Mfr. Part No.:
IXFK26N120P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

TO-264

Series

HiperFET, Polar

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

460mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960W

Maximum Gate Source Voltage Vgs

-30V, +30V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

225nC

Maximum Operating Temperature

150°C

Width

5.13mm

Standards/Approvals

No

Height

26.16mm

Length

19.96mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links