IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1.2 kV Enhancement, 3-Pin TO-264 IXFK26N120P

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Subtotal (1 unit)*

TWD1,503.00

(exc. GST)

TWD1,578.15

(inc. GST)

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Per unit
1 - 6TWD1,503.00
7 +TWD1,466.00

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Packaging Options:
RS Stock No.:
711-5360
Distrelec Article No.:
302-53-346
Mfr. Part No.:
IXFK26N120P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

TO-264

Series

HiperFET, Polar

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

460mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

225nC

Maximum Gate Source Voltage Vgs

-30V, +30V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.13mm

Height

26.16mm

Length

19.96mm

Automotive Standard

No

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