IXYS HiperFET, Polar N-Channel MOSFET, 36 A, 300 V Enhancement, 3-Pin TO-220

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing options

Subtotal (1 tube of 50 units)*

TWD6,625.00

(exc. GST)

TWD6,956.00

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Tube*
50 - 50TWD132.50TWD6,625.00
100 - 150TWD129.60TWD6,480.00
200 +TWD126.70TWD6,335.00

*price indicative

RS Stock No.:
920-0739
Mfr. Part No.:
IXTP36N30P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

300V

Series

HiperFET, Polar

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

-30V, +30V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4.83mm

Height

9.15mm

Length

10.66mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links