Vishay Si4850EY Type N-Channel MOSFET, 8.5 A, 60 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 919-4191
- Mfr. Part No.:
- SI4850EY-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
TWD63,750.00
(exc. GST)
TWD66,950.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 13, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | TWD25.50 | TWD63,750.00 |
| 5000 - 7500 | TWD24.70 | TWD61,750.00 |
| 10000 + | TWD24.00 | TWD60,000.00 |
*price indicative
- RS Stock No.:
- 919-4191
- Mfr. Part No.:
- SI4850EY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | Si4850EY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 3.3W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series Si4850EY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 3.3W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si4850EY Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SI4850EY-T1-GE3
- Vishay Si4134DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay Si4190ADY Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Si4162DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Si4848DY Type N-Channel MOSFET 150 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC