Vishay Si4190ADY Type N-Channel MOSFET, 18 A, 100 V Enhancement, 8-Pin SOIC SI4190ADY-T1-GE3

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Subtotal (1 pack of 5 units)*

TWD244.00

(exc. GST)

TWD256.20

(inc. GST)

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  • 2,010 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 620TWD48.80TWD244.00
625 - 1245TWD48.00TWD240.00
1250 +TWD46.80TWD234.00

*price indicative

Packaging Options:
RS Stock No.:
787-9235
Mfr. Part No.:
SI4190ADY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

100V

Series

Si4190ADY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.2Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6W

Typical Gate Charge Qg @ Vgs

44.4nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5mm

Height

1.5mm

Automotive Standard

No

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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