Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

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Subtotal (1 pack of 20 units)*

TWD186.00

(exc. GST)

TWD195.20

(inc. GST)

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Units
Per unit
Per Pack*
20 - 620TWD9.30TWD186.00
640 - 1240TWD9.10TWD182.00
1260 +TWD9.00TWD180.00

*price indicative

Packaging Options:
RS Stock No.:
812-3205
Mfr. Part No.:
SI4178DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

Si4178DY

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5W

Forward Voltage Vf

0.85V

Typical Gate Charge Qg @ Vgs

7.5nC

Maximum Operating Temperature

150°C

Length

5mm

Height

1.55mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


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