Vishay IRFIZ48G Type N-Channel MOSFET, 37 A, 60 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

TWD2,210.00

(exc. GST)

TWD2,320.50

(inc. GST)

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Per Tube*
50 - 50TWD44.20TWD2,210.00
100 - 150TWD43.20TWD2,160.00
200 +TWD42.30TWD2,115.00

*price indicative

RS Stock No.:
918-9865
Mfr. Part No.:
IRFIZ48GPBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

37A

Maximum Drain Source Voltage Vds

60V

Series

IRFIZ48G

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

2V

Maximum Operating Temperature

175°C

Height

9.8mm

Length

10.3mm

Standards/Approvals

No

Width

4.7mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay IRFIZ48G Series Power MOSFET, 60V Drain Source Voltage, 37A Continuous Drain Current - IRFIZ48GPBF


This power MOSFET is a through-hole N-channel enhancement device designed for switching and power-control tasks in industrial and electronic systems. It operates at medium voltage and is suited to applications requiring significant continuous current handling and elevated temperature tolerance while mounted in a TO-220 package.

Features and Benefits:


• 60V maximum drain voltage enables moderate-voltage system use • 37A continuous drain current supports high-current switching • 18mΩ Rds(on) reduces conduction losses for efficient operation • 50W power dissipation allows sustained thermal loading • 110nC typical gate charge at Vgs provides predictable switching behaviour • 175°C maximum operating temperature permits hot-environment deployment

Applications


• Suitable for motor-drive stage in automation systems • Ideal for power supplies and DC-DC converters • Used for relay replacement in industrial control panels • Can be used for battery-management and power-distribution circuits

What gate-voltage limits should I respect during design?


The maximum gate-to-source voltage is 20V, so gate-drive circuitry must not exceed this to prevent device damage.

How does the package affect mounting and cooling options?


The TO-220 through-hole package with three pins allows bolted heatsink attachment and straightforward PCB mounting for enhanced thermal conduction.

What temperature range can the device tolerate in service?


It is rated for operation from -55°C up to 175°C, enabling use in environments with wide thermal excursions.

What switching characteristic influences drive requirements?


The typical gate charge of 110nC at Vgs determines the drive current and driver selection to achieve desired rise/fall times.

How should I account for power losses in thermal design?


Use the 50W power-dissipation rating to size heatsinks and thermal interfaces, calculating expected losses from conduction and switching for steady-state conditions.

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