Infineon CoolMOS CE Type N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 215-2476
- Mfr. Part No.:
- IPA60R080P7XKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD5,575.00
(exc. GST)
TWD5,854.00
(inc. GST)
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- Shipping from October 12, 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD111.50 | TWD5,575.00 |
| 100 - 150 | TWD109.10 | TWD5,455.00 |
| 200 + | TWD106.70 | TWD5,335.00 |
*price indicative
- RS Stock No.:
- 215-2476
- Mfr. Part No.:
- IPA60R080P7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 29W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 29W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS CE Series MOSFET, 500V Drain Source Voltage, 37A Continuous Drain Current - IPA60R080P7XKSA1
This n-channel MOSFET is a high-voltage switching transistor designed for power-conversion and control applications. It operates reliably across a wide temperature range and is supplied in a TO-220 through-hole package suitable for conventional assembly methods. The device is intended for use where robust drain-to-source voltage capability and moderate power dissipation are required.
Features and Benefits:
• 500V drain rating delivers strong high-voltage tolerance for converters
• 80mΩ Rds(on) enables lower conduction losses during load periods
• 37A continuous drain current supports substantial output capability
• 29W maximum dissipation allows sustained power handling in applications
• 51nC typical gate charge provides predictable switching energy demand
• 0.9V forward voltage reduces drop in diode conduction events
• 80mΩ Rds(on) enables lower conduction losses during load periods
• 37A continuous drain current supports substantial output capability
• 29W maximum dissipation allows sustained power handling in applications
• 51nC typical gate charge provides predictable switching energy demand
• 0.9V forward voltage reduces drop in diode conduction events
Applications
• Suitable for offline switch-mode power supplies
• Ideal for high-voltage DC-DC conversion stages
• Used with industrial motor drive front ends
• Can be used for inrush current limiting circuits
• Suitable for general-purpose power switching in lab rigs
• Ideal for high-voltage DC-DC conversion stages
• Used with industrial motor drive front ends
• Can be used for inrush current limiting circuits
• Suitable for general-purpose power switching in lab rigs
What gate voltage limits must be observed during operation?
The device accepts gate-source voltages up to 20 V
designs should keep gate drive within this range to prevent gate-oxide stress.
How does temperature affect safe use in systems?
The component is rated to operate between -55 °C and 150 °C, so thermal management should ensure junction temperatures remain within this span for reliable service.
Which mounting approach is required for PCB integration?
It is provided in a TO-220 through-hole package, so it is intended for board mounting with mechanical fastening and appropriate heatsinking.
What switching behaviour should designers expect at high voltages?
With a typical gate charge of 51 nC, switching losses scale predictably
driver selection must handle this charge to achieve desired transition speeds.
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IPA60R080P7XKSA1
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