Infineon CoolMOS P7 N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1

RS Stock No.:: 217-2559
Mfr. Part No.:: IPP60R080P7XKSA1
Manufacturer:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1

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Subtotal (1 pack of 5 units)*

TWD1,081.00

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TWD1,135.05

(inc. GST)

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Units	Per unit	Per Pack*
5 - 10	TWD216.20	TWD1,081.00
15 - 20	TWD210.60	TWD1,053.00
25 +	TWD196.80	TWD984.00

*price indicative

RS Stock No.:: 217-2559
Mfr. Part No.:: IPP60R080P7XKSA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	37A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	129W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4.57mm
	Height	29.95mm
	Standards/Approvals	No
	Length	10.36mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 37A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 129W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4.57mm
	Height 29.95mm
	Standards/Approvals No
	Length 10.36mm
	Automotive Standard No

Datasheet - IPP60R080P7XKSA1

Infineon CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 37A Maximum Continuous Drain Current - IPP60R080P7XKSA1

This MOSFET is a high-voltage, N-channel switching transistor designed for power applications requiring through-hole mounting and enhanced-channel operation. It is intended for circuits that need substantial continuous drain current and elevated voltage handling across a wide operating temperature range.

Features and Benefits:

• 600V drain capability enables high-voltage switching applications
• 37A continuous drain current supports high-power load handling
• 80mΩ Rds(on) reduces conduction losses for improved efficiency
• 129W maximum power dissipation allows sustained power handling
• 51nC typical gate charge supports predictable switching behaviour
• 20V gate rating tolerates robust gate-drive voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for motor-drive stages requiring high current
• Used with through-hole PCBs in industrial control systems
• Can be used for switch-mode power conversion designs
• Suitable for needing wide temperature endurance

What thermal extremes can this device operate within?

It is rated to operate from -55°C up to 150°C.

What package and mounting method does it use?

The device is supplied in a TO-220 package for through-hole mounting.

What is the device channel type and operating mode?

It uses an N-type channel in enhancement mode for conventional high-side or low-side switching.

What is the device forward voltage and how does it affect circuits?

The forward voltage is 0.9V, which affects the conduction drop during forward conduction in circuit designs.