Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 913-3831
- Mfr. Part No.:
- IRF1405PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD2,105.00
(exc. GST)
TWD2,210.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 200 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD42.10 | TWD2,105.00 |
| 100 - 150 | TWD41.20 | TWD2,060.00 |
| 200 + | TWD40.30 | TWD2,015.00 |
*price indicative
- RS Stock No.:
- 913-3831
- Mfr. Part No.:
- IRF1405PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Power Dissipation Pd | 330W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Power Dissipation Pd 330W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF
This MOSFET is intended for various applications, offering strong performance in power management solutions. With its robust specifications and advanced processing techniques, it is a key component in the automation and electronics sectors. Its capability to manage high currents and voltages makes it vital for numerous industrial processes.
Features & Benefits
• Maximum continuous drain current of 169A enhances durability
• Rated for 55V, ensuring operation under high voltage conditions
• Low on-resistance of 5mΩ minimises power loss during operation
• Fast switching capability increases system efficiency
• Features enhancement mode for optimal operation
Applications
• Used in industrial motor drives for efficient control
• Suitable for high-current in power supplies
• Ideal for automation equipment driving motors
• Effective in converters and inverters for renewable energy systems
What is the maximum gate-to-source voltage limit?
The maximum gate-to-source voltage is ±20V, ensuring safe operation.
How does this device handle thermal management?
It operates effectively up to 175°C, providing reliability in high-temperature conditions.
What factors should be considered during installation?
Ensure proper mounting torque and account for the thermal resistance of the heatsink to maintain efficient performance.
Can it be used in switching applications?
Yes, it features fast switching capabilities appropriate for high-speed applications, reducing response time.
What gate charge values can be expected during operation?
The typical gate charge is 170nC at 10V, facilitating quick turn-on and turn-off times.
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRF1405PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220