Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF
- RS Stock No.:
- 543-1099
- Mfr. Part No.:
- IRF1405PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 unit)*
TWD91.00
(exc. GST)
TWD95.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 1,757 unit(s) shipping from July 27, 2026
- Plus 229 unit(s) shipping from July 31, 2026
Units | Per unit |
|---|---|
| 1 - 12 | TWD91.00 |
| 13 - 24 | TWD90.00 |
| 25 + | TWD85.00 |
*price indicative
- RS Stock No.:
- 543-1099
- Mfr. Part No.:
- IRF1405PBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 330W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 330W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF
Features & Benefits
Applications
What is the maximum gate-to-source voltage limit?
How does this device handle thermal management?
What factors should be considered during installation?
Can it be used in switching applications?
What gate charge values can be expected during operation?
Related links
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
