Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4898
- Mfr. Part No.:
- IRLZ34NPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD1,270.00
(exc. GST)
TWD1,333.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- 350 left, ready to ship from another location
- Final 500 unit(s) shipping from July 28, 2026
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD25.40 | TWD1,270.00 |
| 100 - 150 | TWD24.80 | TWD1,240.00 |
| 200 + | TWD23.10 | TWD1,155.00 |
*price indicative
- RS Stock No.:
- 919-4898
- Mfr. Part No.:
- IRLZ34NPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF
This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.
Features & Benefits
• Low on-resistance of 35mΩ reduces power loss
• High power dissipation capability of 68W enhances performance
• Operating temperature range from -55°C to +175°C ensures versatility
• Typical gate charge of 25nC at 5V enables faster switching
• Compact TO-220AB package enables efficient PCB layout
Applications
• Utilised in DC-DC converters for efficient power conversion
• Appropriate for motor driver circuits in industrial automation
• Effective in power management systems for renewable energy
• Used in high-speed switching for telecommunications
What is the maximum gate-source voltage?
The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.
How does temperature affect its performance?
The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.
Can it be used in high-frequency applications?
Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.
What are the implications of low Rds(on)?
A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.
Is it compatible with various electronic circuits?
This device is versatile and can be integrated into different circuit configurations, including automotive and industrial power electronics.
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