Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-263 IRF520NSTRLPBF
- RS Stock No.:
- 831-2821
- Mfr. Part No.:
- IRF520NSTRLPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD151.00
(exc. GST)
TWD158.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 10 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 195 | TWD30.20 | TWD151.00 |
| 200 - 395 | TWD28.80 | TWD144.00 |
| 400 + | TWD27.20 | TWD136.00 |
*price indicative
- RS Stock No.:
- 831-2821
- Mfr. Part No.:
- IRF520NSTRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NSTRLPBF
This MOSFET is designed for efficient switching and amplification across various applications. Its high power handling capacity offers versatility in the fields of automation and electronics. With advanced process technology, this device ensures performance and reliability, making it suitable for operational environments. The characteristics of this MOSFET enhance circuit performance significantly.
Features & Benefits
• Low on-resistance contributes to improved energy efficiency
• High drain current rating of 9.7A supports robust performance
• Maximum drain-source voltage of 100V provides application flexibility
• Enhancement mode enables effective switching capabilities
• Surface mount design allows for compact PCB layouts
Applications
• Employed in power management systems for energy conversion
• Suitable for automation controls requiring rapid switching
• Applied in motor control circuits for precision
• Utilised in renewable energy systems such as solar inverters
• Used in audio amplifiers to enhance sound quality
What type of mounting is suitable for this device?
This component features a surface mount design, making it compatible with automated PCB assembly processes and ideal for high-density layouts.
Can it manage high temperatures during operation?
Yes, it has a maximum operating temperature of +175°C, making it apt for harsh environments without compromising performance.
Is this suitable for applications requiring fast switching?
Yes, its rapid switching speed enhances performance in applications like PWM and DC-DC converters.
What is the inductance characteristic of this device?
The internal drain inductance is typically 4.5nH, contributing to its responsive operation.
How is power dissipation handled in this MOSFET?
It allows for a maximum power dissipation of 48W, ensuring thermal stability and effective performance in various circuits.
Related links
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- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263