Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4876
- Mfr. Part No.:
- IRF520NPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD1,440.00
(exc. GST)
TWD1,512.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 200 unit(s) ready to ship from another location
- Plus 2,150 unit(s) shipping from August 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD28.80 | TWD1,440.00 |
| 100 - 150 | TWD28.10 | TWD1,405.00 |
| 200 + | TWD26.10 | TWD1,305.00 |
*price indicative
- RS Stock No.:
- 919-4876
- Mfr. Part No.:
- IRF520NPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NPBF
This MOSFET utilises advanced HEXFET technology to provide high performance for various applications. With a continuous drain current capability of 9.7A and a maximum drain-source voltage of 100V, it is a suitable component for electronic circuits. Its enhancement mode design ensures efficient operation in diverse environments, making it a practical choice for professionals in the automation and electronics fields.
Features & Benefits
• High current capacity of 9.7A enhances performance
• Robust design ensures functionality in extreme conditions
• Low on-resistance of 200mΩ minimises power loss
• Fast switching capabilities improve efficiency
• Compatible with TO-220AB package for straightforward installation
Applications
• Power management in automation systems
• Switching in electrical circuits
• Motor drive circuits for improved efficiency
• High-frequency in electronics
How does the low on-resistance impact performance?
The low on-resistance reduces heat generation and enhances efficiency, resulting in improved overall performance in power applications by minimising energy losses.
What is the significance of the temperature range?
The wide operational temperature range ensures consistent performance in various environments, effectively accommodating both high and low temperature applications.
Can this component handle short pulses of higher current?
Yes, it can manage pulsed drain currents up to 38A, making it suitable for transient conditions in electronic circuits.
What considerations should I have when installing?
Ensure appropriate heatsinking as specified in the datasheet to manage heat dissipation effectively during operation, particularly under high load conditions.
How does the device perform under rapid switching conditions?
Its fast switching speed supports efficient operation in applications requiring quick response times, making it a versatile choice for modern electronic designs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF520NPBF
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220