Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205STRLPBF
- RS Stock No.:
- 831-2809
- Mfr. Part No.:
- IRF3205STRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD491.00
(exc. GST)
TWD515.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 100 unit(s) ready to ship from another location
- Plus 800 unit(s) shipping from September 24, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 190 | TWD49.10 | TWD491.00 |
| 200 - 390 | TWD41.70 | TWD417.00 |
| 400 + | TWD38.80 | TWD388.00 |
*price indicative
- RS Stock No.:
- 831-2809
- Mfr. Part No.:
- IRF3205STRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 146nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 146nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
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