Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-247 IRFP064NPBF
- RS Stock No.:
- 541-0008
- Distrelec Article No.:
- 303-41-342
- Mfr. Part No.:
- IRFP064NPBF
- Manufacturer:
- Infineon
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TWD90.00
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TWD94.50
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 6 | TWD90.00 |
| 7 - 12 | TWD88.00 |
| 13 + | TWD84.00 |
*price indicative
- RS Stock No.:
- 541-0008
- Distrelec Article No.:
- 303-41-342
- Mfr. Part No.:
- IRFP064NPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.3mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Operating Temperature 175°C | ||
Height 20.3mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP064NPBF
This MOSFET represents a high-performance electronic component designed for efficient power management. It can handle a continuous drain current of 110A and a maximum drain-source voltage of 55V, making it suitable for use in automation, electronics, and electrical industries. The enhancement mode design ensures optimal performance under various conditions, highlighting its role in contemporary electronic systems.
Features & Benefits
• Low on-resistance of 8mΩ enhances efficiency
• Maximum power dissipation of 200W ensures robust operation
• Capable of withstanding operating temperatures up to +175°C
• Versatile, compatible with both negative and positive gate-source voltages
• Single transistor configuration supports a variety of applications
Applications
• Used in power supply circuits that require high efficiency
• Common in motor control systems for automation
• Appropriate for telecommunications equipment
• Effective in power conversion systems in industrial environments
What is the maximum power dissipation for this component?
The maximum power dissipation is 200W, which supports robust performance across diverse applications.
Can it operate in high-temperature environments?
Yes, it is capable of functioning effectively at temperatures up to +175°C, making it suitable for challenging conditions.
What type of gate voltage is required for operation?
This device operates with a maximum gate-source voltage range of -20V to +20V, allowing for flexible control options.
How does the channel type influence its performance?
The N-channel type is beneficial for applications needing efficient switching and high current handling.
Is it suitable for through-hole design integrations?
Yes, it has a TO-247AC package with a through-hole mounting type, making installation straightforward in various setups.
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