Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205ZSTRLPBF

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Subtotal (1 pack of 10 units)*

TWD328.00

(exc. GST)

TWD344.40

(inc. GST)

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Units
Per unit
Per Pack*
10 - 10TWD32.80TWD328.00
20 - 90TWD32.00TWD320.00
100 - 240TWD31.10TWD311.00
250 - 490TWD30.40TWD304.00
500 +TWD28.00TWD280.00

*price indicative

Packaging Options:
RS Stock No.:
222-4735
Mfr. Part No.:
IRF3205ZSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

76nC

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

20 V

Length

10.67mm

Width

9.65 mm

Standards/Approvals

No

Height

4.83mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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