Vishay TrenchFET P-Channel MOSFET, -104 A, -20 V Enhancement, 8-Pin PowerPAK 1212-8SH SISH521EDN-T1-GE3

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TWD27.00

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TWD28.35

(inc. GST)

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Units
Per unit
1 - 24TWD27.00
25 - 99TWD18.00
100 +TWD9.00

*price indicative

RS Stock No.:
735-266
Mfr. Part No.:
SISH521EDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

P-Channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

-104A

Maximum Drain Source Voltage Vds

-20V

Package Type

PowerPAK 1212-8SH

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.006Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±12 V

Typical Gate Charge Qg @ Vgs

102nC

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.98mm

Length

3.4mm

Width

3.4 mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
CN

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