Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

Bulk discount available

Subtotal (1 tape of 5 units)*

TWD171.00

(exc. GST)

TWD179.55

(inc. GST)

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Temporarily out of stock
  • Shipping from June 23, 2027
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Units
Per unit
Per Tape*
5 - 745TWD34.20TWD171.00
750 - 1495TWD33.60TWD168.00
1500 +TWD32.80TWD164.00

*price indicative

Packaging Options:
RS Stock No.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.73V

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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