N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

RS Stock No.:: 768-9307
Mfr. Part No.:: SISA04DN-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

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Bulk discount available

Price Each (In a Bag of 2)**

TWD36.50

(exc. GST)

TWD38.32

(inc. GST)

Temporarily out of stock - back order for despatch 01/04/2025, delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Bag**
2 - 748	TWD36.50	TWD73.00
750 - 1498	TWD35.50	TWD71.00
1500 +	TWD34.50	TWD69.00

**price indicative

RS Stock No.:: 768-9307
Mfr. Part No.:: SISA04DN-T1-GE3
Manufacturer:: Vishay

SiSA04DN, N-Channel 30 V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK 1212
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.1 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	51 nC @ 10 V
Length	3.15mm
Width	3.15mm
Transistor Material	Si
Height	1.12mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISA04DN-T1-GE3

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor