Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3

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Subtotal (1 bag of 2 units)*

TWD92.00

(exc. GST)

TWD96.60

(inc. GST)

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Units
Per unit
Per Bag*
2 - 748TWD46.00TWD92.00
750 - 1498TWD45.00TWD90.00
1500 +TWD44.00TWD88.00

*price indicative

Packaging Options:
RS Stock No.:
768-9307
Mfr. Part No.:
SISA04DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

3.15mm

Standards/Approvals

No

Width

3.15 mm

Height

1.12mm

Automotive Standard

No

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