Toshiba Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC TPC8067-H,LQ(S
- RS Stock No.:
- 756-3808
- Mfr. Part No.:
- TPC8067-H,LQ(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD129.00
(exc. GST)
TWD135.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- 90 left, ready to ship from another location
- Final 1,930 unit(s) shipping from June 18, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD12.90 | TWD129.00 |
| 20 - 40 | TWD12.40 | TWD124.00 |
| 50 - 90 | TWD12.10 | TWD121.00 |
| 100 - 190 | TWD11.70 | TWD117.00 |
| 200 + | TWD11.40 | TWD114.00 |
*price indicative
- RS Stock No.:
- 756-3808
- Mfr. Part No.:
- TPC8067-H,LQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Maximum Power Dissipation Pd | 1.9W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.9mm | |
| Height | 1.52mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Maximum Power Dissipation Pd 1.9W | ||
Maximum Operating Temperature 150°C | ||
Length 4.9mm | ||
Height 1.52mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TPCxxxx, Toshiba
MOSFET Transistors, Toshiba
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