Toshiba U-MOSVIII-H N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin TSON TPN30008NH,LQ(S
- RS Stock No.:
- 133-2814
- Mfr. Part No.:
- TPN30008NH,LQ(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD312.00
(exc. GST)
TWD327.60
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | TWD15.60 | TWD312.00 |
| 100 - 180 | TWD15.20 | TWD304.00 |
| 200 - 980 | TWD14.80 | TWD296.00 |
| 1000 - 1980 | TWD14.50 | TWD290.00 |
| 2000 + | TWD14.10 | TWD282.00 |
*price indicative
- RS Stock No.:
- 133-2814
- Mfr. Part No.:
- TPN30008NH,LQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TSON | |
| Series | U-MOSVIII-H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 27W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.1mm | |
| Length | 3.1mm | |
| Height | 850μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TSON | ||
Series U-MOSVIII-H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 27W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.1mm | ||
Length 3.1mm | ||
Height 850μm | ||
Automotive Standard No | ||
MOSFET Transistors, Toshiba
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