Toshiba Single U-MOSVIII-H 1 N-Channel MOSFET, 31 A, 30 V Enhancement, 8-Pin TSON TPN11003NL,LQ(S
- RS Stock No.:
- 133-2811
- Mfr. Part No.:
- TPN11003NL,LQ(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (20 units, in packs of 20)*
TWD196.00
(exc. GST)
TWD205.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 60 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | TWD9.80 | TWD196.00 |
| 100 - 180 | TWD9.50 | TWD190.00 |
| 200 - 980 | TWD9.40 | TWD188.00 |
| 1000 - 1980 | TWD9.10 | TWD182.00 |
| 2000 + | TWD8.90 | TWD178.00 |
*price indicative
- RS Stock No.:
- 133-2811
- Mfr. Part No.:
- TPN11003NL,LQ(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSON | |
| Series | U-MOSVIII-H | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Width | 3.1mm | |
| Length | 3.1mm | |
| Height | 0.85mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSON | ||
Series U-MOSVIII-H | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Width 3.1mm | ||
Length 3.1mm | ||
Height 0.85mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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