onsemi Isolated 2 Type N-Channel MOSFET, 500 mA, 25 V Enhancement, 6-Pin SOT-363 FDG6303N
- RS Stock No.:
- 739-0189
- Mfr. Part No.:
- FDG6303N
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 739-0189
- Mfr. Part No.:
- FDG6303N
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 770mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.25mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 770mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Width 1.25mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23 FDC6321C
- onsemi Isolated 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- onsemi Isolated 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 FDG8850NZ
- onsemi Isolated PowerTrench 2 Type N 1.2 A 6-Pin SOT-363 FDG1024NZ
- onsemi Isolated 2 Type N-Channel Power MOSFET 50 V Enhancement, 6-Pin SOT-23