onsemi Isolated 2 N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- RS Stock No.:
- 354-4941
- Mfr. Part No.:
- FDC6303N
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD25.00
(exc. GST)
TWD26.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Plus 20 unit(s) shipping from October 19, 2026
- Final 2,837 unit(s) shipping from October 26, 2026
Units | Per unit |
|---|---|
| 1 - 749 | TWD25.00 |
| 750 - 1499 | TWD24.00 |
| 1500 + | TWD22.00 |
*price indicative
- RS Stock No.:
- 354-4941
- Mfr. Part No.:
- FDC6303N
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Power Dissipation Pd | 900mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Forward Voltage Vf | 830mV | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Width | 1.7mm | |
| Height | 1mm | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Power Dissipation Pd 900mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Forward Voltage Vf 830mV | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Width 1.7mm | ||
Height 1mm | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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