onsemi Isolated PowerTrench 2 N-Channel MOSFET, 750 mA, 30 V Enhancement, 6-Pin SOT-363 FDG8850NZ

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Subtotal (1 pack of 10 units)*

TWD130.00

(exc. GST)

TWD136.50

(inc. GST)

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Units
Per unit
Per Pack*
10 - 740TWD13.00TWD130.00
750 - 1490TWD12.70TWD127.00
1500 +TWD12.40TWD124.00

*price indicative

Packaging Options:
RS Stock No.:
671-0362
Mfr. Part No.:
FDG8850NZ
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

750mA

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-363

Series

PowerTrench

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

360mW

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12V, -12V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Width

1.25mm

Height

1mm

Length

2mm

Number of Elements per Chip

2

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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