Toshiba 2SJ Type P-Channel MOSFET, 200 mA, 30 V Enhancement, 3-Pin SOT-346 2SJ305(F)
- RS Stock No.:
- 601-1905
- Mfr. Part No.:
- 2SJ305(F)
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD124.00
(exc. GST)
TWD130.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 40 unit(s) ready to ship from another location
- Plus 110 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD12.40 | TWD124.00 |
| 20 - 40 | TWD12.10 | TWD121.00 |
| 50 - 90 | TWD11.80 | TWD118.00 |
| 100 - 190 | TWD11.40 | TWD114.00 |
| 200 + | TWD11.10 | TWD111.00 |
*price indicative
- RS Stock No.:
- 601-1905
- Mfr. Part No.:
- 2SJ305(F)
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-346 | |
| Series | 2SJ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 2.9mm | |
| Width | 1.5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-346 | ||
Series 2SJ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 2.9mm | ||
Width 1.5 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET P-Channel, 2SJ Series, Toshiba
MOSFET Transistors, Toshiba
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