Nexperia NX3008PBKW Type P-Channel MOSFET, 200 mA, 30 V Enhancement, 3-Pin SC-70 NX3008PBKW,115
- RS Stock No.:
- 816-0582
- Mfr. Part No.:
- NX3008PBKW,115
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 150 units)*
TWD300.00
(exc. GST)
TWD315.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 450 unit(s) shipping from February 09, 2026
- Plus 3,000 unit(s) shipping from June 17, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 150 - 600 | TWD2.00 | TWD300.00 |
| 750 - 1350 | TWD2.00 | TWD300.00 |
| 1500 + | TWD1.90 | TWD285.00 |
*price indicative
- RS Stock No.:
- 816-0582
- Mfr. Part No.:
- NX3008PBKW,115
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NX3008PBKW | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 0.55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 830mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NX3008PBKW | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 0.55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 830mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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