Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220 IRL3705NPBF
- RS Stock No.:
- 540-9991
- Mfr. Part No.:
- IRL3705NPBF
- Manufacturer:
- Infineon
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|---|---|
| 1 - 12 | TWD67.00 |
| 13 - 24 | TWD66.00 |
| 25 + | TWD63.00 |
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- RS Stock No.:
- 540-9991
- Mfr. Part No.:
- IRL3705NPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF
This N-channel MOSFET is engineered for high-performance applications, while providing enhanced efficiency and reliability. Utilising advanced HEXFET technology, it boasts minimal on-resistance and is suitable for various automation, electronics, and electrical applications. The device operates across a wide temperature range, ensuring effective performance in diverse environments.
Features & Benefits
• Low Rds(on) of 10mΩ for increased efficiency
• Operates in enhancement mode for innovative circuit designs
• Fast switching capabilities for improved system responsiveness
• Fully avalanche rated for durability in demanding situations
Applications
• Suitable for industrial power management systems
• Ideal for motor drive in automation
• Compatible with power supplies that require low thermal resistance
• Utilised in DC-DC converters for enhanced energy efficiency
What is the maximum power dissipation capability?
The maximum power dissipation is rated at 170W, facilitating effective thermal management under high load conditions.
Is it suitable for high temperatures?
This device can function within a temperature range of -55°C to +175°C, making it suitable for a variety of high-temperature scenarios.
What is the significance of the gate threshold voltage range?
The gate threshold voltage ranges from 1V to 2V, which is essential for determining the on/off states across various gate drive voltages.
What considerations are there for using this in a circuit?
Ensure that the gate-to-source voltage does not exceed ±16V to prevent damage and maintain optimal functionality.
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252 IRLR3705ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263 IRL3705NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220