Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4924
- Mfr. Part No.:
- IRF5305PBF
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD2,485.00
(exc. GST)
TWD2,609.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 100 unit(s) shipping from October 19, 2026
- Plus 2,000 unit(s) shipping from February 11, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD49.70 | TWD2,485.00 |
| 100 - 150 | TWD48.60 | TWD2,430.00 |
| 200 + | TWD45.20 | TWD2,260.00 |
*price indicative
- RS Stock No.:
- 919-4924
- Mfr. Part No.:
- IRF5305PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Width 4.69mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305PBF
This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.
Features & Benefits
• Continuous drain current capacity of 31A supports demanding applications
• Voltage rating of 55V facilitates dependable switching
• Low on-resistance of 60mΩ reduces power loss
• TO-220AB package design enhances thermal performance
• Gate-source voltage range of ±20V accommodates diverse applications
• Rapid switching optimisation boosts overall system efficiency
Applications
• Used in motor control systems for efficient operation
• Applicable in power supply circuits for stable performance
• Integrated into electronic devices requiring effective switching capabilities
• Suitable for deployment in renewable energy systems
What is the temperature range for operation?
It operates within -55°C to +175°C, making it apt for extreme conditions.
How does the package type affect performance?
The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.
Can it handle pulsed drain current applications?
Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.
What type of transistor is this?
It is a P-channel Si MOSFET, optimised for high-efficiency applications.
Is it compatible with automated assembly processes?
Yes, the through-hole design allows for integration into automated systems and circuit boards.
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