Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-262
- RS Stock No.:
- 913-3913
- Mfr. Part No.:
- IRF4905LPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD2,060.00
(exc. GST)
TWD2,163.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD41.20 | TWD2,060.00 |
| 100 - 150 | TWD40.30 | TWD2,015.00 |
| 200 + | TWD39.50 | TWD1,975.00 |
*price indicative
- RS Stock No.:
- 913-3913
- Mfr. Part No.:
- IRF4905LPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 10.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 10.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF
This Infineon MOSFET features a P-channel configuration and is capable of handling -70A of continuous drain current with a maximum drain-source voltage of 55V. It is designed for high-performance applications, particularly in electronic circuits that require effective power management and high efficiency. It is suitable for users in the automation and electronics sectors, offering dependable operation in various environments.
Features & Benefits
• Enhanced performance at high temperatures, up to +175°C
• Low RDS(on) for decreased power losses during operation
• Fast switching capabilities to improve efficiency
• Tolerates repetitive avalanche conditions without failure
• Effective gate charge characteristics for better circuit responsiveness
Applications
• Used in power management circuits for energy-efficient devices
• Ideal for brushless DC motor control
• Applicable in automotive electronics for increased reliability
• Suitable for industrial automation systems that require robust components
What type of voltage can be handled during operation?
It can handle a maximum drain-source voltage of 55V, making it suitable for moderate to high voltage applications.
Can this device operate at elevated temperatures?
Yes, it has an operating temperature range of -55°C to +175°C, allowing it to function in extreme conditions.
How does the low RDS(on) benefit circuit design?
The low RDS(on) reduces conduction losses, resulting in enhanced efficiency and lower heat generation in power applications.
Is this component compatible with typical PCB designs?
Yes, it is designed for through-hole mounting, allowing for seamless integration into standard PCB layouts used in various electronic designs.
What are the gate threshold voltage values for this MOSFET?
The maximum gate threshold voltage is 4V, and the minimum is 2V, ensuring your circuit switches correctly at low voltages.
Related links
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-262 IRF4905LPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRF4905PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-262 IRF3205ZLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK