Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44NPBF

RS Stock No.:: 540-9777
Distrelec Article No.:: 303-41-384
Mfr. Part No.:: IRFZ44NPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44NPBF

The image is for reference only, please refer to product details and specifications

Subtotal (1 unit)*

TWD46.00

(exc. GST)

TWD48.30

(inc. GST)

FREE delivery for orders over NT$1,300.00

In Stock

11 unit(s) ready to ship from another location
Plus 12 unit(s) shipping from June 18, 2026
Plus 1,879 unit(s) shipping from July 02, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 +	TWD46.00

*price indicative

RS Stock No.:: 540-9777
Distrelec Article No.:: 303-41-384
Mfr. Part No.:: IRFZ44NPBF
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	17.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	94W
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 17.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 94W
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF

This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits

• Utilises enhancement mode for responsive control

• Low resistance of 17.5mΩ for effective power management

• Fast switching speeds for improved system performance

Applications

• Suitable for DC-DC converters

• Motor drives and control systems

• Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?

The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?

Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?

This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.

Is it compatible with standard PCB designs?

Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.