DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 280 mA, 60 V Enhancement, 6-Pin SOT-563 2N7002VC-7
- RS Stock No.:
- 885-5362
- Mfr. Part No.:
- 2N7002VC-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
TWD515.00
(exc. GST)
TWD541.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | TWD10.30 | TWD515.00 |
| 750 - 1450 | TWD10.10 | TWD505.00 |
| 1500 + | TWD9.90 | TWD495.00 |
*price indicative
- RS Stock No.:
- 885-5362
- Mfr. Part No.:
- 2N7002VC-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 1.25 mm | |
| Height | 0.6mm | |
| Length | 1.7mm | |
| Standards/Approvals | AEC-Q101 S, UL 94V-0, MIL-STD-202, J-STD-020, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 1.25 mm | ||
Height 0.6mm | ||
Length 1.7mm | ||
Standards/Approvals AEC-Q101 S, UL 94V-0, MIL-STD-202, J-STD-020, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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