Vishay SIRS N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3
- RS Stock No.:
- 279-9963
- Mfr. Part No.:
- SIRS4302DP-T1-GE3
- Manufacturer:
- Vishay
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TWD264.00
(exc. GST)
TWD277.20
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD132.00 | TWD264.00 |
| 50 - 98 | TWD120.50 | TWD241.00 |
| 100 - 248 | TWD109.00 | TWD218.00 |
| 250 - 998 | TWD105.50 | TWD211.00 |
| 1000 + | TWD103.50 | TWD207.00 |
*price indicative
- RS Stock No.:
- 279-9963
- Mfr. Part No.:
- SIRS4302DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 478A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIRS | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00057Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 478A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIRS | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00057Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIRS Series MOSFET, 208W Maximum Power Dissipation, 30V Maximum Drain Source Voltage - SIRS4302DP-T1-GE3
This MOSFET is a high-current N-channel enhancement device designed for demanding power-switching environments. It operates over a wide temperature range and is supplied in a compact SO-8 surface-mount package suitable for integration into densely populated power assemblies. Conforming to RoHS, the component is intended for industrial-grade applications where thermal endurance and substantial continuous current handling are required.
Features and Benefits:
• Very low on-resistance 0.00057Ω for minimal conduction losses
• High continuous drain current 478A enabling heavy-load switching
• Drain-source voltage rating 30V for low-voltage power stages
• Power dissipation capability 208W to support high-power operation
• Gate charge 230nC for predictable switching behaviour
• Gate-source tolerance 20V to accommodate robust drive voltages
• High continuous drain current 478A enabling heavy-load switching
• Drain-source voltage rating 30V for low-voltage power stages
• Power dissipation capability 208W to support high-power operation
• Gate charge 230nC for predictable switching behaviour
• Gate-source tolerance 20V to accommodate robust drive voltages
Applications
• Suitable for high-current DC-DC converters in server racks
• Ideal for parallel MOSFET arrangements in power modules
• Used with synchronous rectification in power supplies
• Can be used for motor-drive stages requiring high peak current
• Appropriate for industrial switching regulators operating over a wide temperature range
• Ideal for parallel MOSFET arrangements in power modules
• Used with synchronous rectification in power supplies
• Can be used for motor-drive stages requiring high peak current
• Appropriate for industrial switching regulators operating over a wide temperature range
How does it perform under extreme ambient temperatures?
It is specified to operate from -55°C up to 150°C, supporting applications exposed to severe thermal conditions.
What mounting method is recommended for thermal management?
Surface-mount placement on a PCB with an appropriate copper area or thermal vias is required to dissipate up to 208W safely.
What gate drive considerations are needed for fast switching?
Expect a typical gate charge of 230nC
drivers must supply adequate peak current to achieve desired rise and fall times without excessive dissipation.
Is the device suited to automotive qualification programmes?
The component is not classified as automotive-grade
suitability for vehicle programmes should be assessed against specific qualification requirements.
Related links
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