Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3
- RS Stock No.:
- 279-9963
- Mfr. Part No.:
- SIRS4302DP-T1-GE3
- Manufacturer:
- Vishay
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TWD220.00
(exc. GST)
TWD231.00
(inc. GST)
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In Stock
- 5,990 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD110.00 | TWD220.00 |
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| 100 - 248 | TWD90.50 | TWD181.00 |
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| 1000 + | TWD86.50 | TWD173.00 |
*price indicative
- RS Stock No.:
- 279-9963
- Mfr. Part No.:
- SIRS4302DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 478A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00057Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 478A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00057Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIRS Series MOSFET, 30V Maximum Drain Source Voltage, 478A Maximum Continuous Drain Current - SIRS4302DP-T1-GE3
This MOSFET is a surface-mount N-channel device designed for high-current power switching in industrial electronics. It operates as an enhancement-mode transistor for controlled conduction in DC power stages and converter topologies, offering elevated temperature tolerance for demanding operating conditions.
Features and Benefits:
• 478A continuous drain current for high-load applications • 0.00057Ω low Rds(on) to minimise conduction losses • 30V drain-source rating for low-voltage power systems • 230nC typical gate charge for predictable switching behaviour • 208W power dissipation to handle substantial thermal loads • 150°C maximum junction temperature for elevated-temperature use
Applications
• Suitable for DC-DC converters in power distribution units • Ideal for motor drive stages in industrial automation • Used for high-current synchronous rectification in PSU designs • Suitable for power switching in battery management systems • Can be used for load switching in server and telecoms power racks
What mounting style does it require and how many pins are present?
It is supplied in an SO-8 surface-mount package with an 8-pin configuration for PCB assembly.
What ambient temperature range can it operate in reliably?
The device supports operation from -55°C up to its specified maximum junction temperature of 150°C.
What gate voltage limits should designers observe?
Gate-source voltage must not exceed ±20V to avoid gate oxide stress.
Is this device compliant with environmental restrictions on hazardous substances?
The component conforms to RoHS requirements for restricted materials.
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