Vishay SIRS N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3
- RS Stock No.:
- 279-9962
- Mfr. Part No.:
- SIRS4302DP-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 3000 units)*
TWD171,000.00
(exc. GST)
TWD179,550.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Final 3,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | TWD57.00 | TWD171,000.00 |
*price indicative
- RS Stock No.:
- 279-9962
- Mfr. Part No.:
- SIRS4302DP-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 478A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIRS | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00057Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 478A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIRS | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00057Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
Vishay SIRS Series MOSFET, 208W Maximum Power Dissipation, 30V Maximum Drain Source Voltage - SIRS4302DP-T1-GE3
Features and Benefits:
• High continuous drain current 478A enabling heavy-load switching
• Drain-source voltage rating 30V for low-voltage power stages
• Power dissipation capability 208W to support high-power operation
• Gate charge 230nC for predictable switching behaviour
• Gate-source tolerance 20V to accommodate robust drive voltages
Applications
• Ideal for parallel MOSFET arrangements in power modules
• Used with synchronous rectification in power supplies
• Can be used for motor-drive stages requiring high peak current
• Appropriate for industrial switching regulators operating over a wide temperature range
How does it perform under extreme ambient temperatures?
What mounting method is recommended for thermal management?
What gate drive considerations are needed for fast switching?
Is the device suited to automotive qualification programmes?
Related links
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