Vishay SIRS Type N-Channel MOSFET, 225 A, 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3

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Subtotal (1 pack of 2 units)*

TWD245.00

(exc. GST)

TWD257.24

(inc. GST)

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Units
Per unit
Per Pack*
2 - 48TWD122.50TWD245.00
50 - 98TWD91.50TWD183.00
100 - 248TWD81.50TWD163.00
250 - 998TWD79.50TWD159.00
1000 +TWD78.50TWD157.00

*price indicative

Packaging Options:
RS Stock No.:
279-9971
Mfr. Part No.:
SIRS5100DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

225A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0025Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

240W

Typical Gate Charge Qg @ Vgs

102nC

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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