Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- RS Stock No.:
- 279-9912
- Mfr. Part No.:
- SIHG155N60EF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD393.00
(exc. GST)
TWD412.64
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 464 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 2 | TWD196.50 | TWD393.00 |
| 4 - 8 | TWD193.00 | TWD386.00 |
| 10 - 28 | TWD188.50 | TWD377.00 |
| 30 - 98 | TWD184.50 | TWD369.00 |
| 100 + | TWD178.00 | TWD356.00 |
*price indicative
- RS Stock No.:
- 279-9912
- Mfr. Part No.:
- SIHG155N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHG | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHG | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 15.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHG Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHG155N60EF-GE3
This MOSFET is a high-voltage switching transistor designed for power conversion and control in demanding electronic systems. It operates as an N-channel enhancement device intended for through-hole mounting in a TO-247AC package, offering robust electrical performance across a wide temperature range for industrial and laboratory environments.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications
• 21A continuous drain current supports substantial load drive
• 0.159 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows high-power operation
• 38 nC typical gate charge improves switching-speed control
• 30V gate-source limit ensures compatibility with common drive voltages
• 21A continuous drain current supports substantial load drive
• 0.159 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows high-power operation
• 38 nC typical gate charge improves switching-speed control
• 30V gate-source limit ensures compatibility with common drive voltages
Applications
• Suitable for switch-mode power supplies in industrial equipment
• Ideal for high-voltage motor drives and inverters
• Used for power-factor-correction modules in large systems
• Can be used for high-power audio amplification switching stages
• Appropriate for laboratory power-electronics prototyping
• Ideal for high-voltage motor drives and inverters
• Used for power-factor-correction modules in large systems
• Can be used for high-power audio amplification switching stages
• Appropriate for laboratory power-electronics prototyping
What thermal range can it withstand during operation?
It functions between -55 °C and 150 °C, supporting use in both low-temperature testing and elevated thermal conditions.
How is it mounted and connected on hardware?
The device is supplied in a through-hole TO-247AC package with three pins for standard PCB or heatsink attachment.
What type of channel and conduction mode does it employ?
It uses an N-type channel operating in enhancement mode, requiring a positive gate drive to conduct.
Are there specific approval standards noted for this component?
It complies with RoHS requirements, indicating restriction of certain hazardous substances.
Related links
- Vishay SIHG Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3