Vishay SIHG N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- RS Stock No.:
- 279-9911
- Mfr. Part No.:
- SIHG155N60EF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 25 units)*
TWD3,282.50
(exc. GST)
TWD3,446.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Final 450 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 75 | TWD131.30 | TWD3,282.50 |
| 100 + | TWD116.70 | TWD2,917.50 |
*price indicative
- RS Stock No.:
- 279-9911
- Mfr. Part No.:
- SIHG155N60EF-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHG | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHG | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
Vishay SIHG Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHG155N60EF-GE3
Features and Benefits:
• 21A continuous drain current supports substantial load drive
• 0.159 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows high-power operation
• 38 nC typical gate charge improves switching-speed control
• 30V gate-source limit ensures compatibility with common drive voltages
Applications
• Ideal for high-voltage motor drives and inverters
• Used for power-factor-correction modules in large systems
• Can be used for high-power audio amplification switching stages
• Appropriate for laboratory power-electronics prototyping
What thermal range can it withstand during operation?
How is it mounted and connected on hardware?
What type of channel and conduction mode does it employ?
Are there specific approval standards noted for this component?
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