Vishay EF Type N-Channel Power MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 653-176
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Manufacturer:
- Vishay
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TWD101.00
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TWD106.05
(inc. GST)
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| 1 - 9 | TWD101.00 |
| 10 + | TWD97.00 |
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- RS Stock No.:
- 653-176
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 9.65mm | |
| Length | 2.79mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 9.65mm | ||
Length 2.79mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 21A Continuous Drain Current - SIHB155N60EF-GE3
This power MOSFET is a high-voltage N‑channel transistor designed for switching and power-conversion roles in demanding electronic systems. It operates across a wide ambient range and is supplied in a through-hole TO‑263 package for robust mounting and thermal management. The device suits designers who need a compact, high-voltage switch with modest gate-charge characteristics for efficient gate drive.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching
• 21A continuous current supports substantial load currents
• 0.159Ω Rds(on) reduces conduction losses during operation
• 25nC typical gate charge minimises driver energy required
• 179W maximum power dissipation allows elevated thermal throughput
• 30V gate-source limit permits standard gate-drive voltages
• 21A continuous current supports substantial load currents
• 0.159Ω Rds(on) reduces conduction losses during operation
• 25nC typical gate charge minimises driver energy required
• 179W maximum power dissipation allows elevated thermal throughput
• 30V gate-source limit permits standard gate-drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used with SMPS topologies requiring through-hole mounting
• Can be used for high-voltage relay and contactor drivers
• Appropriate for power-conditioning equipment in harsh environments
• Ideal for industrial motor-drive switching stages
• Used with SMPS topologies requiring through-hole mounting
• Can be used for high-voltage relay and contactor drivers
• Appropriate for power-conditioning equipment in harsh environments
What thermal range can this transistor tolerate during operation?
It is rated to function from -55°C up to 150°C, accommodating extreme ambient and elevated junction conditions.
How does the package choice affect mounting and cooling options?
The TO‑263 through-hole format provides a solid mechanical connection and a larger thermal pad area for soldering to heatsinks or boards for improved dissipation.
What diode behaviour can be expected in conduction?
The intrinsic diode exhibits a forward drop of approximately 1.2V when conducting, relevant for freewheeling and reverse-current scenarios.
Is this suitable for automotive-qualified applications?
The device is not specified to automotive standards, so it should not be selected where formal automotive qualification is required.
Related links
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3
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